A 3–8GHz Broadband Low Power Mixer
نویسندگان
چکیده
A 3–8 GHz broadband mixer is presented in this paper. This broadband mixer is low power and high conversion gain. It provides current reuse and ac-coupled folded switching. This mixer is designed in TSMC 0.18-μm CMOS technology. This broadband mixer achieves simulated conversion gain of 9 ± 1.5 dB, a single sideband noise figure lower than 15.2 dB and IIP3 batter than −7 dBm. From 3–8GHz, at supply voltage of 1.5V power consumption without output buffer is 3.27 mW and power consumption with buffer is about 8 mW. The chip area is 1079 μm× 761 μm.
منابع مشابه
A 27GHz Frequency Divider in 0.18μm CMOS Technology
This paper presents a broadband high operating frequency divide-by-2 frequency divider. This divider uses sourcecoupled logic (SCL) with two static loading master-slave D latches which achieves high input operating frequency, high input sensitivity and low power dissipation. This divider can work from 8GHz~ 27GHz and the input power is -40dBm@18GHz. The chip area is 735μm×480μm with only 4.6mW ...
متن کاملBroadband Low-Noise CMOS Mixers for Wireless Communications
In this thesis, three broadband low-noise mixing circuits which use CMOS 130 nm technology are presented. As one of the first few stages in a receiving front-end, stringent requirements are posted on mixer performance. The Gilbert cell mixers have presented excellent properties and achieved wide applications. However, the noise of a conventional active Gilbert cell mixer is high. This thesis de...
متن کاملDevelopment of a 385 - 500 GHz SIS Mixer for ALMA Band 8
In this paper, we report on the design and experimental results of a fix-tuned Superconductor-Insulator-Superconductor (SIS) mixer for Atacama Large Millimeter/submillimeter Array (ALMA) band 8 (385-500GHz) receivers. Nb-based SIS junctions of a current density of 10kA/cm and one micrometer size (fabricated with a two-step lift-off process) are employed to accomplish the ALMA receiver specifica...
متن کاملA Broadband Low Power CMOS LNA for 3.1–10.6 GHz UWB Receivers
A new approach for designing an ultra wideband (UWB) CMOS low noise amplifier (LNA) is presented. The aim of this design is to achieve a low noise figure, reasonable power gain and low power consumption in 3.1-10.6 GHz. Also, the figure of merit (FOM) is significantly improved at 180nm technology compared to the other state-of-the-art designs. Improved π-network and T-network are used to obt...
متن کامل200-280GHz CMOS RF Front-End of Transmitter for Rotational Spectroscopy*
A 200-280 GHz RF front-end of transmitter is demonstrated in 65-nm CMOS. Saturated EIRP is greater than -5dBm over a frequency range of 60GHz. When the input power is -20dBm, EIRP is greater than -10dBm for most of the frequency range, and achieves 3-dB and 6-dB bandwidths of 24% and 33%. The front-end was integrated with a fractional-N synthesizer to form a transmitter operating at 208-255GHz ...
متن کامل